Electrical and Computer Engineering North Carolina A&T State University
Dr. Shanthi Iyer
Professor
Department of Electrical and Computer Engineering
Contact:
    Department of Electrical and Computer Engineering
    NC A&T University, Greensboro, NC 27411
    Phone: (336) 334-7760, Ext. 220
    E-mail: iyer@ncat.edu


 For More Information:
    Center for Advanced Material and Smart Structures (CAMSS)
   
     Detail Biographical Sketch (pdf)
Education:
   Ph.D. Indian Institute of Tech., Delhi, India. 1983.
    M.S. Electrical Engineering, Delhi University, Delhi, India.1976.
    B.S. Electrical Engineering,Delhi University, Delhi, India 1974.
Areas of Research Interest:
       Research interests are focussed on the molecular beam epitaxial (MBE) growth, characterization and device applications of the narrow band gap III-V compound semiconductors. The research projects in progress include the investigation of low threading dislocation density compliant layers for devices operating in the mid infrared region.
The research work carried out by Dr. Iyer over the last decade includes liquid phase electro-epitaxial growth of Sb based binaries and quaternary alloys lattice matched to GaSb for mid infrared optoelectronic device applications, detailed study of the low temperature photoluminescence and photoreflectance characteristics of these layers to study the nature of the defects and critical energy transition points, respectively, damage studies of the ion implanted species in GaSb and their recovery by rapid thermal annealing using Rutherford back-scattering/channeling technique, semi-insulating properties of Fe-doped InP, and transparent and conducting oxides by spray pyrolysis.

  Molecular Beam Epitaxy Laboratory (http://www.ece.ncat.edu/research/mbe/)
Selected Publications:
  1. S. Iyer, S. Mulugeta, W. Collis, S. Venkatraman, K. K. Bajaj and G. Coli, "Photoreflectance Studies of Te-Doped GaSb at the E0+(0 Transition", J. Appl. Phys. 87,2336 (2000).


  2. J. Li, T. Rawdanowicz, S. Iyer, S. Venkatraman and W.J. Collis, "Molecular Beam Epitaxial Growth and Doping of InSb using SnTe Source" Proc. of TMS Editor Ben Q Li, p277 1998


  3. J. Li, S. Iyer, S. Venkatraman, "Rheed Study of Oxide Desorption of InSb", Presented at the MRS Fall Meeting, Boston, MA (Dec.1, 1997), Mat. Res. Soc. Symp. Proc.484 (1997).


  4. S. Iyer, S. Mulugeta, J. Li, B. Mangalam, and S. Venkatraman, " Photoreflectance Study of MBE Grown Te-doped GaSb at the E0+D0 Transition", Presented at the MRS Fall Meeting, Boston, MA (Dec.2, 1997), Mat. Res. Soc. Symp. Proc.484, 57-62 (1997).


  5. S. Iyer, K.K. Bajaj, Shahnaz Chowdhury-Nagle and Jie Li, " Theoretical Study of InTlSb/InAsSb Superlattice for Far Infared Detector", ", Presented at the MRS Spring Meeting, San Francisco (April 8, 1996), Mat. Res. Soc. Symp. Proc. 421, 395(1996).